Carrier-phonon coupling in GaAs_1-xBi_x/GaAs quantum wells, A. Chernikov, V. Bornwasser, M. Koch, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, S. Chatterjee, Semicon. Scien. and Technol. 27, 085012 (2012)

The phonon-assisted emission of GaAs_1-xBi_x quantum wells with Bi concentrations up to x = 0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier-phonon coupling is observed manifesting itself in a Huang-Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier-phonon scattering.